Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3291127
Keywords
buffer layers; carbon; chromium alloys; cobalt alloys; dielectric relaxation; dielectric thin films; iron alloys; lanthanum compounds; lead compounds; manganese alloys; molybdenum alloys; permittivity; silicon alloys; sol-gel processing; tungsten alloys; vanadium alloys; zirconium compounds
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Funding
- U.S. Department of Energy, Office of Vehicle Technologies Program [DEAC02-06CH11357]
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Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films were deposited by sol-gel synthesis on Hastelloy substrates with and without a LaNiO3 buffer. The dielectric properties were measured as a function of temperature and frequency to study the cause of dielectric degradation in PLZT films directly on hastelloy substrates. These measurements indicated an increased charge carrier activity in films without a buffer layer. We propose that a region of the film closer to the substrate surface is more oxygen deficient than the bulk and is responsible for the degradation in properties rather than the presence of a low parasitic secondary-phase interfacial layer such as NiOx.
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