Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3272909
Keywords
absorption coefficients; bismuth compounds; conduction bands; critical points; dielectric function; electronic density of states; electronic structure; ellipsometry; energy gap
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Funding
- The NNSA Office of Nonproliferation Research and Engineering [NA-22]
- Division of Materials Science and Engineering, Office of Basic Energy Sciences, USDOE [DE-AC05-00OR 22725]
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The optical dielectric function of bismuth germanate (Bi(4)Ge(3)O(12)) has been measured using spectroscopic ellipsometry and optical transmission. Analysis near the direct band edge indicates that there are at least three critical points at 4.44 (low intensity) and at 4.75 and 4.91 (high intensity). Using transmission measurements, the band gap is determined to be 4.20 eV, which is likely determined by the defects in the material. Comparisons are made with relativistic electronic structure and optical calculations based on the Engel-Vosko generalized gradient approximation. The near-absorption-edge critical points are associated with spin-orbit-split bands which significantly modify the conduction bands.
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