Interface-induced gap states and band-structure lineup at TiO2 heterostructures and Schottky contacts

Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations

(2009) A. Schleife et al.   APPLIED PHYSICS LETTERS

Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)

(2009) Dahlang Tahir et al.   APPLIED PHYSICS LETTERS

Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy

(2009) J. B. You et al.   JOURNAL OF APPLIED PHYSICS

On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states

(2008) Winfried Mönch   APPLIED PHYSICS LETTERS

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

(2008) N. V. Nguyen et al.   APPLIED PHYSICS LETTERS

Energy band alignment at TiO2∕Si interface with various interlayers

(2008) M. Perego et al.   JOURNAL OF APPLIED PHYSICS

Properties of isotype n-ZnO/n-GaN heterostructures studied by I–V–T and electron beam induced current methods

(2008) Ya I Alivov et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Effects of oxygen on low-temperature growth and band alignment of ZnO∕GaN heterostructures

(2008) H. F. Liu et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

Band offsets of ultrathin high-κoxide films with Si

(2008) Eric Bersch et al.   PHYSICAL REVIEW B

The influence of series resistance and interface states on intersecting behavior ofI–Vcharacteristics of Al/TiO2/p-Si (MIS) structures at low temperatures

(2008) O Pakma et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY