Effect of Cr concentration on resistance switching in Cr-doped SrZrO3 films and surface accumulation of Cr ions

The role of Cr ions in the resistance switching (RS) of Cr-doped SrZrO3 films has been investigated by x-ray photoelectron spectroscopy and electric current measurements. The results show that the RS behavior depends on the Cr concentration, substrate temperature during film growth, and oxygen pressure during the postannealing process. Migration of Cr3+ ions to the surface makes the surface Cr rich, and thus, appreciable RS is observed. These observations suggest that the RS behavior can be controlled by trapping and releasing Cr carriers in the interface region between the film and the electrode. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3499626]