Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3427559
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Funding
- National Science Foundation [ECS-0335765]
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Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] thin films have been extensively studied for their ferroelectric properties and are a promising material for sensing and memory applications. Imprint, the time-dependent resistance to polarization reversal, is a key material property that limits applications and is poorly understood. We have used a fast ramp rate thermally stimulated current (FR-TSC) technique to investigate the proposed link between imprint time and filling of charge trap states, and to characterize these traps in an appropriate time-frame. Thin films of P(VDF-TrFE) on oxidized Si substrates were characterized following controlled initialization, fatigue, polarization, and imprint. Traps were allowed to fill during room temperature imprint for times from 1 to 10(4) s. Remaining unfilled traps were subsequently filled and quantified by FR-TSC temperature cycling from 20 to 100 degrees C at 1 K/s. Results confirm that charge trap filling occurs both with time, under isothermal conditions, as well as with increasing temperature. The rate of charge accumulation induced by FR-TSC exhibits the same logarithmic dependence with time as the experimentally measured imprint voltage; this strongly suggests a direct link between these trapped charges and the imprint field. Furthermore, measurements of the switching speed in post FR-TSC films were found to be independent of the imprint time, confirming that thermal cycling brought all samples to a common final state. These results provide further understanding of the polarization dynamics and materials interactions affecting the ferroelectric properties of P(VDF-TrFE). (C) 2010 American Institute of Physics. [doi: 10.1063/1.3427559]
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