Article
Crystallography
Marc Portail, Eric Frayssinet, Adrien Michon, Stephanie Rennesson, Fabrice Semond, Aimeric Courville, Marcin Zielinski, Remi Comyn, Luan Nguyen, Yvon Cordier, Philippe Vennegues
Summary: (111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The films deposited on AlN/Si templates showed better structural quality compared to films grown directly on Si(111). The presence of twinned domains and small inclusions of 6H-SiC were observed in the 3C-SiC films. Additionally, a thin AlSiN film was formed at the AlN/Si interface, and noticeable changes were observed in the AlN film.
Article
Materials Science, Multidisciplinary
Sebastian Leszczynski, Carsten Strobel, Barbara Leszczynska, Sylva Waurenschk, Soeren Roehlecke, Frank Stahr, Matthias Albert, Johann W. Bartha
Summary: This study demonstrated the integration of linear hot-wire (HW) and very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) for the fabrication of highly efficient heterojunction solar cells. The results show that dynamic HW and VH-PECVD technologies enable fabrication of high deposition rates and high passivation properties for highly efficient solar cells.
Article
Materials Science, Multidisciplinary
Dae-Seop Byeon, Choonghee Cho, Dongmin Yoon, Yongjoon Choi, Kiseok Lee, Seunghyun Baik, Dae-Hong Ko
Summary: High-order silanes show better epitaxial growth results at low temperatures, while traditional silane and disilane have lower growth rates at low temperatures.
Article
Chemistry, Physical
Nilabh Dish, Rakesh Behera, A. Satyaprasad, Abhay Gautam
Summary: This study successfully grows epitaxial Ag, Au, and Cu films on NaCl crystals using a simple approach, and shows a considerable tolerance towards surface misorientation.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Physical
Pierre Tomasini
Summary: The silicon chemical vapor deposition process via silane is determined using classical thermodynamics, showing that a linear function of temperature controls silicon growth rates and neatly maps the response of growth rate activation energy, providing clarity to the parameter space. The study demonstrates the portability of the linear function of temperature across reactors and extracts reactor scaling factors, reducing the complex silicon deposition process to its essentials through thermodynamics.
CHEMISTRY OF MATERIALS
(2021)
Article
Chemistry, Physical
Zilei Wang, Zhaolang Liu, Hao Lin, Fan Ye, Pingqi Gao
Summary: The hot wire oxidation-sublimation deposition method is used to prepare tungsten oxide films with adjustable work functions, which do not affect the quality of the passivating layer. By using hydrogenated amorphous silicon and tungsten oxide as hole-selective contacts in silicon heterojunction solar cells, a higher power conversion efficiency can be achieved.
MATERIALS TODAY ENERGY
(2023)
Article
Optics
Wenhao Huang, Jun Xiao, Shujun Chen, Xiaoqing Jiang
Summary: This study investigates the transfer behavior of aluminum-alloy wire in laser hot wire deposition (LHWD) process. The results show that stable wire melting and transfer can be achieved by controlling the matching of wire preheating current and feed speed, providing a deeper understanding of the LHWD process.
OPTICS AND LASER TECHNOLOGY
(2022)
Article
Materials Science, Multidisciplinary
Haoyu Jiang, Zhengjun Lu, Wei Deng, Fengquan Qiu, Yujian Zhang, Jialin Shi, Jiansheng Jie, Xiujuan Zhang
Summary: This paper presents a lateral homoepitaxy growth method that is compatible with scalable solution printing techniques, enabling the fabrication of centimeter-scale organic semiconductor single crystal arrays. The approach achieves high-uniformity morphology and low trap carrier density, leading to significantly improved organic field-effect transistor performance.
ACS MATERIALS LETTERS
(2023)
Article
Chemistry, Physical
Pojung Lin, Jiazhe Liu, Hongche Lin, Zhiyuan Chuang, Wenching Hsu, Yiche Chen, Poliang Liu, Rayhua Horng
Summary: In this study, GaN-based epitaxial structures were grown on high-resistivity silicon (HRSi) substrates by met-alorganic chemical vapor deposition. The p-type parasitic channels generated at the interfaces of the aluminum nitride (AlN) nucleation layers and HRSi substrates were characterized. A 2-nm thick silicon nitride (SiNx) layer was used to suppress the Al diffusion and prevent the generation of p-type parasitic channels. The insertion loss of the optimized structure was only 0.04 dB/mm higher than that of the annealed HRSi substrate at 10 GHz.
SURFACES AND INTERFACES
(2023)
Article
Crystallography
Yoshiaki Daigo, Akio Ishiguro, Yoshikazu Moriyama, Ichiro Mizushima
Summary: In this study, homo-epitaxial 4H-SiC films were successfully grown by adjusting the Cl/Si ratio and C/Si ratio in the CVD process. It was found that the formation of Si islands can be suppressed by decreasing the C/Si ratio.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Engineering, Chemical
Pierre Tomasini
Summary: Chemical vapor deposition is a challenging chemical process, with growth rates controlled by mass transfer or kinetics. Simplification of the reaction mechanism and unification of growth regimes are achieved through drastic assumptions and a simplified thermodynamic model. Linear functions of temperature resembling Gibbs free energy are extracted from germanium deposition experiments.
CHEMICAL ENGINEERING SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Joao Otavio Mendes, Andrea Merenda, Karen Wilson, Adam Fraser Lee, Enrico Della Gaspera, Joel van Embden
Summary: The growth of (001) oriented antimony chalcogenide thin films can be controlled by tuning the substrate nanostructure, which is crucial for enhancing the performance of these films.
Article
Crystallography
Balamurugan Deivendran, Vijay M. Shinde, Harish Kumar, N. Eswara Prasad
Summary: This study presents the 3D modeling and optimization of a commercial hot wall vertical reactor for SiC coating, investigating the impact of various process parameters on hydrodynamic stability. It was found that buoyancy-driven flow can occur inside the reactor at high Reynolds number and Gr/Re-2 ratio. Process optimization using response surface methodology significantly reduced the number of experiments and simulations required for optimizing the CVD process.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Chemistry, Multidisciplinary
Xukun Zhu, Lokwing Wong, Xiulian Fan, Jiong Zhao, Yu Zhou, Fangping Ouyang
Summary: The study proposes a simple growth strategy for nonlayered Cr-based chalcogenide nanoplates by adjusting the spatial distribution of gas flow and characterizes the elemental growth steps through electron microscopy. The results not only provide a new universal growth method but also demonstrate an electrostatic-assistance method to transfer nanoplates to arbitrary surfaces, reducing electronic influence.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Engineering, Electrical & Electronic
Pierre Tomasini
Summary: A simplified model of Silicon Germanium Chemical Vapor Deposition is proposed for determining Vapor-Solid distributions via any precursor route. The incorporation of the atomic element into the crystal lattice is linked to the loss of all ligands in the chemical precursor. Experimental trends show different ratios relative to silane for different precursors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Energy & Fuels
Heather M. Mirletz, Kelly A. Peterson, Ina T. Martin, Roger H. French
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2015)
Article
Materials Science, Multidisciplinary
Kehan Yu, Clifford C. Hayman, S. Manjunath, Wei Fan, Ina T. Martin, Heidi B. Martin, R. Mohan Sankaran
DIAMOND AND RELATED MATERIALS
(2016)
Article
Nanoscience & Nanotechnology
Daniel J. V. Pulsipher, Ina T. Martin, Ellen R. Fisher
ACS APPLIED MATERIALS & INTERFACES
(2010)
Article
Nanoscience & Nanotechnology
Rebecca A. Shircliff, Ina T. Martin, Joel W. Pankow, John Fennell, Paul Stradins, Maria L. Ghirardi, Scott W. Cowley, Howard M. Branz
ACS APPLIED MATERIALS & INTERFACES
(2011)
Article
Nanoscience & Nanotechnology
Aidin Rashidi, Marola W. Issa, Ina T. Martin, Amir Avishai, Sepideh Razavi, Christopher L. Wirth
ACS APPLIED MATERIALS & INTERFACES
(2018)
Article
Physics, Applied
M. J. Romero, K. Alberi, I. T. Martin, K. M. Jones, D. L. Young, Y. Yan, C. Teplin, M. M. Al-Jassim, P. Stradins, H. M. Branz
APPLIED PHYSICS LETTERS
(2010)
Article
Physics, Applied
Kirstin Alberi, Ina T. Martin, Maxim Shub, Charles W. Teplin, Manuel J. Romero, Robert C. Reedy, Eugene Iwaniczko, Anna Duda, Paul Stradins, Howard M. Branz, David L. Young
APPLIED PHYSICS LETTERS
(2010)
Article
Physics, Applied
Kirstin Alberi, Howard M. Branz, Harvey Guthrey, Manuel J. Romero, Ina T. Martin, Charles W. Teplin, Paul Stradins, David L. Young
APPLIED PHYSICS LETTERS
(2012)
Article
Chemistry, Multidisciplinary
Rebecca A. Shircliff, Paul Stradins, Helio Moutinho, John Fennell, Maria L. Ghirardi, Scott W. Cowley, Howard M. Branz, Ina T. Martin
Article
Physics, Fluids & Plasmas
I. T. Martin, M. A. Wank, M. A. Blauw, R. A. C. M. M. van Swaaij, W. M. M. Kessels, M. C. M. van de Sanden
PLASMA SOURCES SCIENCE & TECHNOLOGY
(2010)
Article
Materials Science, Multidisciplinary
Ina T. Martin, Charles W. Teplin, Paul Stradins, Marc Landry, Maxim Shub, Robert C. Reedy, Bobby To, James V. Portugal, John T. Mariner
Article
Materials Science, Multidisciplinary
Howard M. Branz, Charles W. Teplin, Manuel J. Romero, Ina T. Martin, Qi Wang, Kirstin Alberi, David L. Young, Paul Stradins
Article
Nanoscience & Nanotechnology
Rachael Matthews, Emily Glasser, Samuel C. Sprawls, Roger H. French, Timothy J. Peshek, Emily Pentzer, Ina T. Martin
ACS APPLIED MATERIALS & INTERFACES
(2017)
Proceedings Paper
Energy & Fuels
Ina T. Martin, Tricia M. Oyster, Lorelle M. Mansfield, Rachael Matthews, Emily B. Pentzer, Roger H. French, Timothy J. Peshek
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
(2016)