Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

(2008) Q. L. Gu et al.   APPLIED PHYSICS LETTERS

Comment on “Characterization of As-doped, p-type ZnO by x-ray absorption near-edge structure spectroscopy: Theory” [Appl. Phys. Lett. 89, 222113 (2006)]

(2008) Veeramuthu Vaithianathan et al.   APPLIED PHYSICS LETTERS

Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process

(2008) J. Petersen et al.   JOURNAL OF APPLIED PHYSICS

Exceptionally Long Exciton Photoluminescence Lifetime in ZnO Tetrapods

(2008) Yongchun Zhong et al.   Journal of Physical Chemistry C

Deep-level defects study of arsenic-implanted ZnO single crystal

(2008) C.Y. Zhu et al.   MICROELECTRONICS JOURNAL

Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

(2008) Z. Q. Chen et al.   PHYSICAL REVIEW B

Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

(2008) L W Lu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY