Microcrystalline Si films grown at low temperatures (90–220 °C) with high rates in atmospheric-pressure VHF plasma

Published 2009 View Full Article

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Title
Microcrystalline Si films grown at low temperatures (90–220 °C) with high rates in atmospheric-pressure VHF plasma
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 1, Pages 013521
Publisher
AIP Publishing
Online
2009-07-10
DOI
10.1063/1.3159887
References
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