Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3068337
Keywords
diffusion; elemental semiconductors; getters; iron; phosphorus; segregation; silicon
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Funding
- Endeas Oy, Okmetic Oyj, Semilab Inc.
- VTI Technologies Oy, TEKES
- Academy of Finland
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We propose a quantitative model for phosphorus diffusion gettering (PDG) of iron in silicon, which is based on a special fitting procedure to experimental data. We discuss the possibilities of the underlying physics of the segregation coefficient. Finally, we show that the proposed PDG model allows quantitative analysis of gettering efficiency of iron at various processing conditions.
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