Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3190679
Keywords
annealing; boron compounds; dielectric function; infrared spectra; plasma CVD; semiconductor materials; semiconductor thin films; vibrational modes
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Funding
- National Science Foundation [0725881]
- MRSEC [DMR-0820521]
- NASA [NNG05GM89G]
- Army Research Office [A08-T013]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0725881] Funding Source: National Science Foundation
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Infrared vibrations of as-deposited and annealed semiconducting boron carbide thin films were investigated by midinfrared spectroscopic ellipsometry. The strong boron-hydrogen resonance at similar to 2560 cm(-1) in as-deposited films reveals considerable hydrogen incorporation during plasma-enhanced chemical vapor deposition. Extended annealing at 600 degrees C caused significant reduction in film thickness, substantial reduction of boron-hydrogen bond resonance absorption, and development of distinct blue-shifted boron-carbon and icosahedral vibration mode resonances. Our findings suggest that annealing results in substantial loss of hydrogen and in development of icosahedral structure, accompanied by strain relaxation and densification.
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