Low-voltage operation and excellent data retention characteristics of metal-ferroelectric-insulator-Si devices based on organic ferroelectric films

Organic Ferroelectric Diodes with Long Retention Characteristics Suitable for Non-Volatile Memory Applications

(2008) Sumiko Fujisaki et al.   Applied Physics Express

ENHANCEMENT OF MEMORY RETENTION TIME OF MFIS STRUCTURE WITH SBT FERROELECTRIC AND SiO2 BUFFER LAYERS TREATED BY NITROGEN RADICAL IRRADIATION

(2008) Le Van Hai et al.   INTEGRATED FERROELECTRICS

CHARACTERIZATION OF METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE USING FERROELECTRIC POLYMER POLYVINYLIDENE FLUORIDE-TRIFLUOROETHYLENE (PVDF-TrFE) (51/49)

(2008) Dong-Won Kim et al.   INTEGRATED FERROELECTRICS

Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications

(2008) Xu-bing Lu et al.   JOURNAL OF APPLIED PHYSICS

Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness

(2008) Xubing Lu et al.   JOURNAL OF MATERIALS RESEARCH

Optimum ambient N[sub 2] pressure during HfAlO pulsed-laser deposition in Pt∕SBT∕HfAlO∕Si field effect transistors

(2008) M. Takahashi et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Metal–ferroelectric–insulator–Si devices using HfTaO buffer layers

(2008) Xu-bing Lu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY