Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3076895
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The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using a new type of spin transistor comprised of a metal-oxide-semiconductor field-effect transistor (MOSFET) and magnetic tunnel junction (MTJ) that is referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit approach to reproduce the functions of spin transistors, based on recently progressed magnetoresistive random access memory technology. The proposed NV-SRAM cell can be simply configured by connecting two PS-MOSFETs to the storage nodes of a standard SRAM cell. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3076895]
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