Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3267488
Keywords
catalysts; gallium arsenide; III-V semiconductors; indium compounds; manganese; nanowires; phonon spectra; Raman spectra; semiconductor quantum wires; surface phonons
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Funding
- International Center for Theoretical Physics (ICTP), Trieste, Italy
- National Engineering & Scientific Commission, Islamabad, Pakistan
- HEC
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Micro-Raman spectroscopy is employed to study the phonon confinement in Au- and Mn-catalyzed GaAs and InAs nanowires. The phonon confinement model is used to fit the LO phonon peaks, which also takes into account the contribution to the asymmetry of the line shape due to the presence of surface optical (SO) phonons and structural defects. This also allows us to determine the correlation lengths in these wires, that is the average distance between defects and the defect density in these nanowires. Influence of these defects on the SO phonon is also investigated. A good agreement between the experimental results and the calculations for the SO phonon mode by using the dielectric continuum model is also obtained.
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