Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3159642
Keywords
annealing; gallium arsenide; iron; magnetic anisotropy; magnetic epitaxial layers; magnetisation; molecular beam epitaxial growth; transmission electron microscopy; X-ray diffraction
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Funding
- National Natural Science Foundation of China [60836002, 10674130, 60521001]
- Major State Basic Research of China [2007CB924903]
- Knowledge Innovation Program Project of Chinese Academy of Sciences [KJCX2.YW.W09-1]
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Fe films with the different thicknesses were grown on c(4x4) reconstructed GaAs (001) surfaces at low temperature by molecular-beam epitaxy. Well-ordered bcc structural Fe epitaxial films are confirmed by x-ray diffraction patterns and high-resolution cross-sectional transmission electron microscopy images. A large lattice expansion perpendicular to the surface in Fe film is observed. In-plane uniaxial magnetic anisotropy is determined by the difference between magnetizing energy along [110] and [110] directions, and the constant of interfacial uniaxial magnetic anisotropy is calculated to be 1.02x10(-4) J m(-2). We also find that magnetic anisotropy is not obviously influenced after in situ annealing, but in-plane strain is completely changed.
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