4.6 Article

Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences

Journal

JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 6, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3222851

Keywords

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Funding

  1. National Basic Research Program of China [2007CB935402]
  2. National Natural Science Foundation of China [50872139, 10874247, 60490290, 60678009, 50502036]

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Fast phase transition processes on Ge2Sb2Te5 film induced by picosecond laser pulses were studied using time-resolved reflectivity measurements. It was found that after picosecond laser pulse priming, reversible switching could be occurred upon picosecond laser pulse irradiation with the same well-chosen fluence. This is very different from general knowledge that reversible phase change process will be induced by laser pulses with different powers; that is, amorphization process needs much higher fluence than crystallization process. The possible mechanism was discussed qualitatively by a melting-cooling model. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3222851]

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