Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3079525
Keywords
gallium compounds; III-V semiconductors; indium compounds; MOCVD; photoluminescence; quantum confined Stark effect; sapphire; semiconductor growth; semiconductor quantum dots; surface energy; wide band gap semiconductors
Categories
Funding
- UK EPSRC-GB [EP/C543521/1, EP/C543513/1]
- EPSRC [EP/C543521/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/C543513/1, EP/C543521/1] Funding Source: researchfish
Ask authors/readers for more resources
Two typical kinds of InGaN quantum dots (QDs) have been grown on sapphires under different conditions through modifying the NH3 flow rate using metal-organic chemical vapor deposition: small spherical dots with a high dot density and large truncated pyramidal dots with a low dot density. The small dots have been found typically coherent and defect-free, while a strain relaxation has often been observed in the large dots. Consequently, this leads to a massive difference in optical properties between them. The optical properties have been investigated by means of temperature-dependent and excitation power-dependent microphotoluminescence measurements. It has been found that the small spherical QDs show higher optical quantum efficiency and much weaker piezoelectric field induced quantum-confined Stark effect than the large truncated QDs. Based on the energy balance between the strain and surface energy, the influence of V/III ratio on the transition from two-dimensional to three-dimensional growth mode during the QD growth has been discussed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available