Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3097776
Keywords
annealing; electrodes; elemental semiconductors; high-k dielectric thin films; lanthanum compounds; semiconductor-insulator boundaries; silicon; silicon compounds; vacancies (crystal); work function
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The stability of the effective work function (phi eff) on La-based high-k materials was studied in detail by changing the annealing ambient and the gate dielectric stack. phi eff for a LaAlO3/SiO2/Si stack with Pt gate electrode was not affected by the annealing ambient, whereas that for a Pt gate electrode on an La2Hf2O7/SiO2/Si stack increased sharply when O-2 annealing was performed after forming gas annealing (FGA). Comparison with the results for a stack without SiO2 indicates that this anomalous phenomenon in the La2Hf2O7/SiO2/Si stack is caused by oxygen-vacancy-related dipoles at La2Hf2O7/SiO2 interface produced by FGA.
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