Structural properties of tensily strained Si layers grown on SiGe(100), (110), and (111) virtual substrates

Published 2009 View Full Article

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Title
Structural properties of tensily strained Si layers grown on SiGe(100), (110), and (111) virtual substrates
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 106, Issue 4, Pages 043508
Publisher
AIP Publishing
Online
2009-08-20
DOI
10.1063/1.3187925
References
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