Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3072667
Keywords
elemental semiconductors; heat treatment; materials preparation; scanning tunnelling microscopy; self-assembly; silicon; surface morphology
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Funding
- Russian Foundation for Basic Research [08-02-00612]
- Russian Academy of Sciences
- French Ministry of Foreign Affairs
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Regular single and triple step arrays with different periodicities have been fabricated in ultrahigh vacuum on clean Si(557) surfaces at various thermal treatment procedures. The atomic structure of the triple step staircases has been studied with high resolution scanning tunneling microscopy (STM). The results of atomically resolved STM experiments demonstrate a number of possible triple step configurations on Si(hhm) surfaces. The triple step models consistent with atomically resolved STM data obtained on regular Si(223) and Si(556) triple step staircases are presented. Possible driving forces for self-assembling regular step arrays on large scale areas are discussed.
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