Photoinduced resistivity change of electron-doped La0.8Te0.2MnO3 film

In this paper, electron-doped La0.8Te0.2MnO3 film has been prepared on SrTiO3 (100) substrate by pulsed laser deposition method, and the photoinduced resistivity change and colossal magnetoresistance effect have been investigated. The results show that the film has a high metal-insulator transition temperature T-MI of similar to 283 K and the maximum magnetoresistance ratio is similar to 24% at 0.7 T. Under laser irradiation, T-MI varies from 283 to 243 K and resistivity increases below T-MI, while it decreases above T-MI. The maximum photoinduced resistivity change in resistivity (LR%) is 134.8%. The photoinduced relaxation character of the film indicates that the relaxation of photoinduced character relates to the excitation of small polarons.