Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology

Published 2008 View Full Article

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Title
Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 103, Issue 12, Pages 123530
Publisher
AIP Publishing
Online
2008-06-26
DOI
10.1063/1.2925798

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