Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

Published 2008 View Full Article

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Title
Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 103, Issue 7, Pages 073303
Publisher
AIP Publishing
Online
2008-04-08
DOI
10.1063/1.2891787

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