Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires

Erratum: “Nucleation mechanism of gallium-assisted Molecular Beam Epitaxy growth of Gallium Arsenide nanowires” [Appl. Phys. Lett. 92, 063112 (2008)]

(2008) A. Fontcuberta i Morral et al.   APPLIED PHYSICS LETTERS

Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

(2008) A. Fontcuberta i Morral et al.   APPLIED PHYSICS LETTERS

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

(2008) Florian Furtmayr et al.   JOURNAL OF APPLIED PHYSICS

Optical Properties of Rotationally Twinned InP Nanowire Heterostructures

(2008) Jiming Bao et al.   NANO LETTERS

Enhanced thermoelectric performance of rough silicon nanowires

(2008) Allon I. Hochbaum et al.   NATURE

Silicon nanowires as efficient thermoelectric materials

(2008) Akram I. Boukai et al.   NATURE

Prismatic Quantum Heterostructures Synthesized on Molecular‐Beam Epitaxy GaAs Nanowires

(2008) Anna Fontcuberta i Morral et al.   Small

Orthorhombic Pbcn SnO2 nanowires for gas sensing applications

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