P-Zn3P2 single nanowire metal-semiconductor field-effect transistors

As far as we know, all the single nanowire (NW) metal-semiconductor field-effect transistors (MESFETs) reported are based on n-type NWs. We report MESFETs based on p-type Zn3P2 single NWs in this paper. The p-type Zn3P2 single NW MESFETs operate in the enhancement mode (E-mode). The source-drain current decreases with gate bias (V-G) increasing, confirming the p-type conductance of the Zn3P2 NWs. Typically, the p-type Zn3P2 single NW MESFET has an on/off current ratio of 10(3), a threshold gate voltage of -0.4 V, and a maximum transconductance of 110 nS. (c) 2008 American Institute of Physics.