Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3040701
Keywords
annealing; bonding processes; condensation; elemental semiconductors; infrared spectra; interface structure; semiconductor-insulator boundaries; silicon; silicon compounds; X-ray reflection
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Funding
- SOITEC S. A.
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The sealing mechanism of silicon bonding interfaces is reported as a function of annealing temperature. Details of the structural and chemical interface evolution are obtained for hydrophilic silicon/silicon and silicon/silicon dioxide wafer bonding, using x-ray reflectivity and infrared spectroscopy. A two-step mechanism is demonstrated: first a partial sealing of the interface driven by cross-wafer silanol bond condensation and second a water evacuation via oxide formation at the silicon oxide interface.
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