Journal
JOURNAL OF APPLIED PHYSICS
Volume 103, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2906320
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Zinc oxide bulk crystals were doped with nitrogen by ion beam implantation. After postimplantation annealing, a luminescent transition appears at 3.230 eV. Power-dependent photoluminescence studies and time-resolved measurements at several spectral positions within this band can be described by a model for donor-acceptor-pair (DAP) transitions. By tracing the luminescence in a temperature-dependent study, a connection to phonon replicas could be excluded. Based on these results, this luminescence line could be clearly assigned to a DAP transition. In order to increase the doping efficiency, various approaches are considered and discussed. A slight increase could be obtained by high-temperature implantation without postimplantation annealing. (c) 2008 American Institute of Physics.
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