Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3010304
Keywords
amorphous semiconductors; annealing; elemental semiconductors; extinction coefficients; nanostructured materials; optical dispersion; Raman spectra; refractive index; silicon; silicon compounds; transparency; X-ray photoelectron spectra
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Funding
- Academy of Finland
- CoE CMS and FinNano Program (OPNA)
- EU 6th framework program through an EIF Marie Curie Fellowship [41102]
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The optical properties of silica layers containing silicon nanocrystals are analyzed in terms of spectral filtering in absorbing planar waveguides (cutoff spectra), m-line measurements, and x-ray photoelectron spectroscopy (XPS). The effects of optical dispersion, approximation of weak guiding, and depth dependence of refractive index in a planar waveguide are studied. We compare the measured optical properties of silicon-rich silicon oxide samples with the values estimated by the Bruggeman theory using the XPS structural components. A good agreement between the measured and calculated refractive indices is found. The results for absorption suggest high transparency of the nanoscale-suboxide component in contrast to the corresponding bulk material. The Raman intensity of silicon nanocrystals is proportional to the XPS amount of bulk silicon. The extinction coefficient extracted for the Si component is between the values for crystalline and amorphous silicon. Annealing at higher temperatures decreases the Si component extinction coefficient, which is interpreted as a decrease in the amorphous Si fraction. The XPS method surprisingly suggests a large proportion of silicon suboxide even after annealing at 1200 degrees C.
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