Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3050327
Keywords
annealing; doping profiles; electrical conductivity; excitons; gold; II-VI semiconductors; impurity states; interstitials; photoluminescence; semiconductor doping; wide band gap semiconductors; zinc compounds
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Funding
- Supreme Council for Science and Technological Development of the Academy of Sciences of Moldova [06.408.037F, 077/P]
- INTAS [06-10000146370]
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Photoluminescence (PL) spectra are investigated in n-ZnSe single crystals at different temperatures from 4.4 to 300 K immediately after doping with Au from melt of Se+Au or Zn+Au and after storage of the doped samples for 4 years in the dark under normal room conditions. Due to the formation of Au(i) interstitial donors in the n-ZnSe:Se:Au crystals with time, the origin of the near band edge PL changes from acceptor-bound to donor-bound excitons. Taking into account the results of PL characterization, we proposed that the Au(i) donors are generated by displacement of Au ions from regular lattice sites to interstitial sites with the help of lattice deformation forces. Transport measurements show dramatic increase in the electrical conductivity and the free electron concentration after storage of the n-ZnSe:Zn:Au crystals, thus confirming the proposed model.
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