Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting

Published 2008 View Full Article

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Title
Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 104, Issue 11, Pages 113722
Publisher
AIP Publishing
Online
2008-12-12
DOI
10.1063/1.3041154
References
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