Article
Physics, Applied
Junxue Ran, Rui He, Lulu Wang, Bingzhi Liu, Xiaoli Ji, Jingyu Sun, Junxi Wang, Jinmin Li, Tongbo Wei
Summary: Pt/Al0.75Ga0.25N Schottky barrier diodes (SBDs) with and without a graphene interlayer were fabricated and their electrical characteristics were analyzed. The results showed that the presence of the graphene interlayer improved the performance of the SBDs, leading to a higher barrier height and more uniform barrier distribution.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Chemistry, Physical
Xuemin Hu, Wenqiang Liu, Jialin Yang, Shengli Zhang, Yuanfeng Ye
Summary: The study focuses on the electronic structures and contact properties of graphene/XC (X = P, As, Sb, Bi) van der Waals heterostructures, revealing the impact of different X atoms on contact properties and increasing electron tunneling probabilities with larger atomic radius.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
A-Rang Jang
Summary: This study investigates the effect of electrodes on the electrical properties of single-layer MoS2 field-effect transistors (FETs). The contact barrier at the MoS2-graphene interface can be modulated, resulting in enhanced performance compared to FETs with Au/Ti electrodes.
Article
Nanoscience & Nanotechnology
Qianyang Zhang, Linlin Hou, Viktoryia Shautsova, Jamie H. Warner
Summary: In this article, ultrathin all-2D lateral diodes are fabricated using monolayer 2D materials grown by chemical vapor deposition. The placement of graphene electrodes below and above the WS2 monolayer creates a lateral device with two different Schottky barrier heights. The device exhibits rectification behavior and can generate strong electroluminescence. The work contributes to the understanding of 2D metal-semiconductor heterojunctions and proposes a method for obtaining all-2D Schottky diodes while maintaining an ultrathin form.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Dingbo Zhang, Yue Hu
Summary: The study explores the contact behavior between graphene and two-dimensional semiconductors, showing that graphene/InP3 heterostructures have low binding energy and mechanical stability, allowing for experimental preparation. A shift from n-type to p-type Schottky contact can be induced by shortening the layer spacing, making graphene/InP3 heterostructures into semiconductors under large compressive strain. The design of a Schottky barrier transistor based on modulated contact type, which can tune the doping of graphene in graphene/InP3 heterostructures, is of significant importance for guiding the design of new generation graphene-based contact.
APPLIED SURFACE SCIENCE
(2021)
Article
Nanoscience & Nanotechnology
Carsten Strobel, Carlos A. Chavarin, Karola Richter, Martin Knaut, Johanna Reif, Sandra Voelkel, Andreas Jahn, Matthias Albert, Christian Wenger, Robert Kirchner, Johann W. Bartha, Thomas Mikolajick
Summary: A graphene-based three-terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field-effect transistors. This device, called graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate to modulate the device currents and demonstrates high current gain. The functionality of a silicon-graphene-germanium GABT with ultra-high current gain was successfully demonstrated.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Carsten Strobel, Carlos A. Chavarin, Karola Richter, Martin Knaut, Johanna Reif, Sandra Voelkel, Andreas Jahn, Matthias Albert, Christian Wenger, Robert Kirchner, Johann W. Bartha, Thomas Mikolajick
Summary: In this study, a novel graphene-based transistor called graphene adjustable-barriers transistor (GABT) was proposed and analyzed. It utilizes a semiconductor-based gate to modulate the device currents, overcoming the low on/off ratios and insufficient current saturation of conventional graphene transistors.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Energy & Fuels
Bhanu Chettri, Prasanta Kumar Patra, Zosiamliana Renthlei, Amel Laref, Dibya Prakash Rai
Summary: The hydrogen storage properties of the bilayer h-BN/Gr heterostructure were studied using density functional theory calculations. The results show that the material has the potential to be used for hydrogen storage, with high gravimetric density and modulation of adsorption by van der Waals and electrostatic interactions.
Article
Physics, Applied
Filiberto Ricciardella, Maria Arcangela Nigro, Riccardo Miscioscia, Maria Lucia Miglietta, Tiziana Polichetti
Summary: This study investigates a rectifying device based on solution-processed multilayered graphene (MLG), studying its behavior when exposed to oxidizing atmosphere, particularly nitrogen oxide (NO2), and comparing it with a chemiresistor. The research paves the way for low-cost, highly sensitive graphene-based heterojunctions without technological complexity.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Physics, Applied
Tao Jing, Dongmei Liang, Xincheng Huang, Mingsen Deng, Shaohong Cai, Wenjiang Liu
Summary: This study systematically explores the interfacial properties of graphene/In2Te3 heterostructures by employing first principles calculations. The electronic structures of graphene and In2Te3 monolayer are well preserved upon contact, and the transition between n-type Ohmic and p-type Schottky contacts can be realized by switching the polarity of In2Te3.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Anousha Khamsavi, Yaser Abdi, Zahra Fekrirad, Ehsan Arefian
Summary: A glioblastoma cancer cell biosensor based on mono-layer graphene/(n-type)Si Schottky junction is proposed in this study. The sensor can distinguish different glioblastoma cancer cell lines and differentiate them from healthy cells, providing a new avenue for cancer cell detection and differentiation.
IEEE SENSORS JOURNAL
(2022)
Article
Multidisciplinary Sciences
Manuele Bettelli, Silvia Zanettini, Leonardo Abbene, Francesca Casoli, Lucia Nasi, Giovanna Trevisi, Fabio Principato, Antonino Buttacavoli, Andrea Zappettini
Summary: With the rise of the 4th Generation Synchrotron Light Sources and other applications, there is a strong need for direct X-ray detection under high photon flux. The novel Cadmium Zinc Telluride (CZT) developed by Redlen Technologies is considered a reference material for such applications. This study reports a detailed investigation on the characteristics of new optimized sputtered platinum electrical contacts on HF-CZT detectors.
SCIENTIFIC REPORTS
(2023)
Article
Chemistry, Physical
Z. H. Li, J. N. Han, S. G. Cao, Z. H. Zhang
Summary: The construction of graphene/MoSi2X4 (X=N, P, As) van der Waals heterojunctions and their systematic investigation reveal that these heterojunctions have low Schottky barrier height and better electrical contact behavior. Vertical strain and electric field regulations can achieve more ideal electrical contacts, and physical regulations can induce high-concentration carrier doping in graphene, providing new possibilities for the design of graphene/MoSi2X4-based high-gain transistors. These heterojunctions also possess a reasonable Poisson ratio and high stiffness features, making them suitable for electrode and nano-device materials.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Min Ji Im, Seok-Ki Hyeong, Min Park, Seoung-Ki Lee, Tae-Wook Kim, Gun Young Jung, Sukang Bae
Summary: A new sandwich doping method has been reported to effectively enhance the work function and reduce sheet resistance of graphene, leading to improved power conversion efficiency in graphene-silicon solar cells. These sandwich-doped graphene-based silicon solar cells exhibit significantly higher efficiency and excellent long-term stability without additional encapsulation.
Article
Physics, Condensed Matter
I. P. Koziarskyi, M. I. Ilashchuk, I. G. Orletskyi, D. P. Koziarskyi, L. A. Myroniuk, D. V. Myroniuk, A. I. Ievtushenko, E. V. Maistruk
Summary: The paper investigates the electrical properties of graphene/p-CdTe structures utilizing different durations of graphene films application on p-CdTe crystalline substrates. The formation of graphene layers is confirmed by Raman scattering spectra analysis, and the electrical properties depend on the duration of graphene films sputtering due to the thermally stimulated change in the equilibrium characteristics of the base material and the formation of a near-surface layer with an increased concentration of acceptor-type defects.
PHYSICA B-CONDENSED MATTER
(2023)
