Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 585, Issue -, Pages 94-97Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2013.09.134
Keywords
ZnO; Selenium; PLD; Band gap engineering
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Funding
- Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology (MEST) [2012-00109]
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2012-0000217]
- through NITA
- QSRC at Dongguk University
- Hindustan University, Chennai, India through CENCON at QSRC
- International Research & Development Program of the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology (MEST) of Korea [2012-033431]
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ZnO1-xSex films with various selenium concentrations are deposited on the sapphire substrate (0001) by pulsed laser deposition technique. Structural properties of the thin films studied by X-ray diffraction (XRD) and chemical bonding studied by X-ray photoelectron spectroscopy (XPS) reveals that Se is substituted in O site during the growth of ZnO1-xSex films. Optical properties are analyzed by UV-Visible spectrometer. From the plot for (alpha h upsilon)(2) vs photon energy, it is inferred that the band gap energy of ZnO1-xSex gradually reduces to 2.85 eV with increasing Se concentration. (C) 2013 Elsevier B.V. All rights reserved.
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