4.7 Article

Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 583, Issue -, Pages 70-78

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2013.08.123

Keywords

Semiconductors; Equation of state; Elasticity; Mechanical properties; High-pressure; X-ray diffraction

Funding

  1. Spanish government MEC [MAT2010-21270-C04-01/03/04, CTQ2009-14596-C02-01]
  2. Comunidad de Madrid and European Social Fund [S2009/PPQ-1551 4161893]
  3. Vicerrectorado de Investigacion y Desarrollo of the Universidad Politecnica de Valencia [UPV2011-0914 PAID-05-11, UPV2011-0966 PAID-06-11]
  4. Juan de la Cierva fellowship

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In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB(2)X(4) ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1 GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa2S4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pressure dependence of the theoretical cation-anion and vacancy-anion distances and compressibilities in HgGa2S4 are reported and discussed in comparison to other related ordered-vacancy compounds. Finally, the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa2S4 has been studied. Our calculations indicate that the low-pressure phase of HgGa2S4 becomes mechanically unstable above 13.8 GPa. (C) 2013 Elsevier B. V. All rights reserved.

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