Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 547, Issue -, Pages 59-62Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2012.08.070
Keywords
ZnCdO thin film; Band gap engineering; Photoluminescence; Pulsed laser deposition
Categories
Funding
- National Natural Science Foundation of China [51072181]
- Doctoral Fund of Ministry of Education of China [20090101110044]
- Science and Technology Department of Zhejiang Province [2010R50020]
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ZnCdO thin films with different Cd contents have been deposited on quartz substrate by pulsed laser deposition. All the obtained films have a hexagonal wurtzite ZnO structure with a highly c-axis orientation without any Cd related phases from the XRD patterns. The band gap energy of ZnCdO films extending to 2.88 eV can be achieved by incorporating 9.6% Cd content. The bound excitons emission at 2.925 eV in the ZnCdO thin film can be found in the low temperature photoluminescence measurement. (c) 2012 Elsevier B.V. All rights reserved.
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