Journal
NANOSCALE
Volume 7, Issue 46, Pages 19413-19418Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr04664e
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Funding
- Graphene project in the Innovation R&D programme of the National Measurement System of the U.K. Department of Business, innovation and Skills [115948, 118616]
- Raman Metrology project in the Chemical and Biological programme of the National Measurement System of the U.K. Department of Business, innovation and Skills [116326]
- European Metrology Research Programme (EMRP) Project NEW02: Raman Metrology
- EMRP within EURAMET
- European Union
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The Raman scattering D-peak in graphene is spatially localised in close proximity to defects. Here, we demonstrate the capability of tip-enhanced Raman spectroscopy (TERS) to probe individual point defects, even for a graphene layer with an extremely low defect density. This is of practical interest for future graphene electronic devices. The measured TERS spectra enable a direct determination of the average inter-defect distance within the graphene sheet. Analysis of the TERS enhancement factor of the graphene Raman peaks highlights the preferential enhancement and symmetry-dependent selectivity of the D-peak intensity caused by zero-dimensional Raman scatterers.
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