Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 540, Issue -, Pages 204-209Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2012.06.071
Keywords
Thin films; Piezoelectricity; Dielectric response; Ferroelectrics
Categories
Funding
- Fusion Research Program for Green Technologies through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2011-0000010, 2010-0029706, 2010-0019694]
- National Research Foundation of Korea (NRF)
- National Research Foundation of Korea [2010-0019694, 과C6B1912, 2010-0019096] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Lead-free 0.94Bi(0.5)Na(0.5)TiO(3)-0.06BaTiO(3) (BNT-BT) piezoelectric thin films were prepared by metalorganic solution deposition onto a Pt/Ti/SiO2/Si substrate. A dense and well crystallized thin film with a perovskite phase was obtained by annealing these films at 700 degrees C. Atomic force microscopy showed that these films were smooth and crack-free with an average grain size on the order of 200 nm. Thin films of 356 nm thickness exhibited a small signal dielectric constant and a loss tangent at 1 kHz of 613 and 0.044, respectively. Ferroelectric hysteresis measurements indicated a remanent polarization value of 21.5 mu C/cm(2) with a coercive field of 164.5 kV/cm. The leakage current density of the thin film was 4.08 x 10(-4) A/cm(2) at an applied electric field of 200 kV/cm. A typical butterfly-shaped piezoresponse loop was observed and the effective piezoelectric coefficient (d(33)) of the BNT-BT thin film was approximately 51.6 pm/V. (C) 2012 Elsevier B.V. All rights reserved.
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