Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 509, Issue 30, Pages 7854-7860Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2011.01.133
Keywords
Semiconductors; Thin films; Sol-gel processes; Optical properties; Light absorption and Reflection
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Cr doped ZnO thin films were prepared via sol-gel method. The effects of dopant concentration (0%, 1.5% and 3%) annealing temperature and film thickness on UV-Vis spectra of prepared films were investigated. Also, the thickness and surface topology of thin films were investigated by thickness profile meter (DEKTAK) and Atomic Force Microscopy (AFM), respectively. In addition, the band gap and Urbach energy of prepared films were calculated completely for the samples. The results showed that by increasing the dopant concentrations, the microstrain of the prepared thin film structures also increases while the band-gap values decrease. Meanwhile, an increase in annealing temperature makes a decrease in band gap and microstrain of thin films. The increase in thickness resulted in red shift in band gap and reduction in interior microstrains. (C) 2011 Elsevier B.V. All rights reserved.
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