The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I–V–T characteristics

Title
The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I–V–T characteristics
Authors
Keywords
-
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 492, Issue 1-2, Pages 421-426
Publisher
Elsevier BV
Online
2009-11-24
DOI
10.1016/j.jallcom.2009.11.128

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