Journal
NANOSCALE
Volume 7, Issue 10, Pages 4394-4399Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr00399g
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Funding
- Hungarian Research Funds [OTKA K105735, K112918]
- European Union [293797]
- Bolyai Janos Research Scholarship of the HAS
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The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.
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