Structure and photovoltaic characteristics of CuInSe2 thin films prepared by pulse-reverse electrodeposition and selenization process

In this study, CuInSe2 thin films were prepared by pulse-reverse electrode position and selenization process and characterized by X-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscope (AFM). The pulse-deposited films show well adherent to the substrate and smooth surface with fine grains. The chalcopyrite structure of CuInSe2 with enhancement in crystallinity was observed for the films after selenization treatment in Se vapor. The best solar cell fabricated using the resultant films as absorber layers within a Ni-Al/ZnO:Al/i-ZnO//CdS/CIS/Mo/soda-lime glass structure showed an efficiency of 1.42% under AM 1.5 illumination. (C) 2008 Elsevier B.V. All rights reserved.