Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 449, Issue 1-2, Pages 366-370Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2006.01.141
Keywords
oxide materials; semiconductors; electronic band structure; computer simulation
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The electronic structures of delafossite-type oxide AgFeO2 have been calculated by using the full potential linearlized augmented plane wave (FP-LAPW) method within the generalized gradient approximation (GGA) and GGA + U. It was found that the GGA calculations lead to a metallic state for AgFeO2 which is in contradiction with the experiment that AgFeO2 is a semiconductor. By taking into account the Hubbard interaction parameter U, the GGA+U calculations produce a semiconducting state for AgFeO2 when U>0.68eV. An energy band gap which is the gap between the highest occupied valance band of Ag-3d and the lowest upper Hubbard band of Fe-3d was predicted to be 1.15 eV with an effective U-eff = 7.86 eV. (c) 2006 Elsevier B.V. All rights reserved.
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