Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core–Shell Heterostructures

Published 2015 View Full Article

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Title
Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core–Shell Heterostructures
Authors
Keywords
-
Journal
NANO LETTERS
Volume 15, Issue 12, Pages 7837-7846
Publisher
American Chemical Society (ACS)
Online
2015-10-31
DOI
10.1021/acs.nanolett.5b02454

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