Journal
NANO LETTERS
Volume 15, Issue 10, Pages 6794-6801Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b02634
Keywords
GaN; nanowires; Si doping; EDX; four probe resistivity; field effect transistor; electron mobility
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With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 mu m in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NI/Vs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Omega.cm, and a carrier concentration from 10(17) to 10(20) cm(-3). Field effect transistor (PET) measurements combined with finite element simulation by NextNano(3) software have put in evidence the high mobility of carriers in the nonintentionally doped (NLD) NWS.
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