4.8 Article

Crystallographic Characterization of II-VI Semiconducting Nanostructures via Optical Second Harmonic Generation

Journal

NANO LETTERS
Volume 15, Issue 11, Pages 7341-7346

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b02690

Keywords

Second harmonic generation; semiconductor; nanowires; transmission electron microscope; crystal structure; nonlinear optics; photoluminescence

Funding

  1. US Army Research Office [W911NF-09-1-0477, W911NF-11-1-0024]
  2. National Institutes of Health through the NIH Director's New Innovator Award Program [1-DP2-7251-01]

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We demonstrate the utility of optical second harmonic generation (SHG) polarimetry to perform structural characterization of noncentrosymmetric, single-crystalline II-VI semiconducting nanowires, nanobelts, and nanoflakes. By analyzing anisotropic SHG polarimetric patterns, we distinguish between wurtzite and zincblende II-VI semiconducting crystal structures and determine their growth orientation. The crystallography of these nanostructures was then confirmed via transmission electron microscopy measurements performed on the same system. In addition, we show that some intrinsic material properties such as nonlinear coefficients and geometry-dependent optical in-coupling coefficients can also be determined from the SHG experiments in WZ nanobelts. The ability to perform SHG-based structural characterization and crystallographic study of II-VI semiconducting single-crystalline nanomaterials will be useful to correlate structure-property relationships of nanodevices on which transmission electron microscopy measurements cannot be typically performed.

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