Journal
JETP LETTERS
Volume 98, Issue 12, Pages 843-847Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0021364013250176
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Funding
- Russian Foundation for Basic Research [12-02-00054, 14-02-01165]
- Russian Academy of Sciences
- Ministry of Education and Science of the Russian Federation
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The 2D semimetal in a 20 nm (100) HgTe quantum well is characterized by a comparatively low overlap between the conduction and the valence bands induced by lattice mismatch. In the present paper we report the results of transport measurements in this quantum well under hydrostatic pressure of 14.4 kbar. By applying pressure we have further reduced the band overlap, thereby creating favorable conditions for the formation of the excitonic insulator state. As a result, we observed that the metallic-like temperature dependence of the conductivity at lowering temperature sharply changes to the activated behavior, signaling the onset of an excitonic insulator regime.
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