Journal
JETP LETTERS
Volume 100, Issue 4, Pages 256-261Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0021364014160073
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Funding
- Russian Foundation for Basic Research [13-02-01228, 14-02-92015]
- Division of Physical Sciences, Russian Academy of Sciences [A29]
- Russian Science Foundation [14-19-01644]
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Nonlinear conductance along the crystallographic axis c across the layered whiskers of the TiS3 quasi-one-dimensional semiconductor has been discovered. It has been shown that the current-voltage characteristics in all three directions along the a, b, and c axes obey a power law with the exponent increasing with a decrease in temperature. Possible mechanisms of the nonlinear conductance including the motion of condensed electrons, excitation and dissociation of electron-hole pairs in two-dimensional layers, and interlayer tunneling under the conditions of the Coulomb blockade with a charge spreading over the layers are considered.
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