Article
Engineering, Electrical & Electronic
Yining Yu, Nannan Lv, Dongli Zhang, Yiran Wei, Mingxiang Wang
Summary: The letter discusses how the carrier mobility of amorphous InGaZnO thin-film transistors was enhanced by introducing nitrogen and forming Zn3N2, with a saturation field-effect mobility of 61.6 cm(2)/Vs. However, annealing at 400 degrees C led to a decrease in mobility to 4.1 cm(2)/Vs due to the formation of defective ZnxNy. Additionally, the enhanced mobility of a-IGZO TFTs did not exhibit persistent photoconductivity behavior, making them suitable for functional circuits in active-matrix displays.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Physical
Md Mehedi Hasan, Samiran Roy, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim, Jin Jang
Summary: By employing one-step annealing, we successfully induced ferroelectricity in spray coated ZrO2 with sputtered amorphous InGaZnO (a-IGZO) capping layer, achieving a large memory window of 1.5 V, high I-ON/I-OFF ratio of 1 x 10(7), and steep subthreshold swing (SS) of 0.12 V/decade. The low thermal expansion coefficient of a-IGZO helped induce the polar orthorhombic phase in the underlying ZrO2 layer by providing suitable mechanical stress. This work provides a new approach for inducing ferroelectricity in ZrO2 for high performance ferroelectric thin film transistors.
APPLIED SURFACE SCIENCE
(2023)
Article
Materials Science, Multidisciplinary
Jinbaek Bae, Arqum Ali, Jin Jang
Summary: Spray-pyrolyzed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with self-aligned (SA) coplanar structure exhibits excellent performance and stability, making it a promising metal oxide semiconductor for high-performance TFT backplanes.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Chemistry, Analytical
Wen Zhang, Zenghui Fan, Ao Shen, Chengyuan Dong
Summary: The study showed that heat treatments in O-2 or air resulted in higher threshold voltage and off current, lower field-effect mobility, and slightly improved PBS stability for a-IGZO TFTs. On the other hand, annealing processes in vacuum or N-2 had almost no impact on the electrical performance of a-IGZO TFTs, but significantly improved their PBS stability.
Article
Engineering, Electrical & Electronic
Tianyuan Song, Dongli Zhang, Mingxiang Wang
Summary: The study demonstrates that annealing at 400 degrees C in O-2 atmosphere can effectively reduce trap states in the a-IGZO channel, improving the stability of TFTs.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Jusin Lee, Min Jae Kim, Heewon Yang, Sunjin Kim, Seongoh Yeom, Gunwoo Ryu, Yoonsoo Shin, Onejae Sul, Jae Kyeong Jeong, Seung-Beck Lee
Summary: In this study, a stable and sensitive biochemical sensor based on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with a versatile extended-gate electrode was reported. The sensor demonstrated high sensitivity and specificity for protein detection, and could be potentially used for future multifunctional biomolecular sensing and analysis.
IEEE SENSORS JOURNAL
(2021)
Article
Chemistry, Physical
Wengao Pan, Yunping Wang, Yanxin Wang, Zhihe Xia, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Xinwei Wang, Shengdong Zhang, Lei Lu
Summary: In this work, the multiple effects of hydrogen (H) doping on amorphous InGaZnO (IGZO) TFTs were investigated. The H content influenced the electrical performances of the TFTs, acting as a defect suppressor, donor defect, transition state, and finally an acceptor defect. The oxygen vacancy (Vo) in IGZO determined the diffusion channel of the H dopant and its concentration. Additionally, fluorine (F) doping improved the hydrogen resistibility of IGZO.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Materials Science, Multidisciplinary
Jiseob Lee, Suhui Lee, Md Mobaidul Islam, Jin Jang
Summary: A short channel coplanar amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with a ZrAlOx (ZAO) interlayer has been developed, showing high field-effect mobility and on/off current ratio, and demonstrating stability under testing conditions of 85 degrees Celsius and 85% relative humidity for 2 days.
ADVANCED ENGINEERING MATERIALS
(2022)
Article
Computer Science, Information Systems
Chang Liu, Yiming Liu, Song Wei, Yi Zhao
Summary: This study investigates the impact of gate voltage sampling interval and various difference approximation methods on extracting subthreshold swing values for InGaZnO TFTs. An empirical formula is proposed to estimate the proper sampling interval for accurate approximating the subthreshold swing. The findings and methods presented in this work could provide valuable references for extracting subthreshold swing and other parameters in InGaZnO TFTs.
Article
Engineering, Electrical & Electronic
Maruti B. Zalte, Virendra Kumar, Sandeep G. Surya, Maryam Shojaei Baghini
Summary: Metal oxide semiconductors, particularly solution-processed amorphous Indium-Gallium-Zinc-Oxide (IGZO) transistors, were studied for their feasibility in radiation sensing and the effects of gamma radiation on their performance. The changes induced by radiation in the IGZO thin-film transistors were mainly observed in threshold voltage shift and subthreshold swing. The sensitivity obtained with gamma irradiation was 27.78mV/Gy, and the radiation-induced changes in TFTs were found to be completely removed after storing irradiated TFTs in vacuum for 6 months.
IEEE SENSORS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Huan Yang, Tengyan Huang, Xiaoliang Zhou, Jiye Li, Sikai Su, Lei Lu, Shengdong Zhang
Summary: Under self-heating stress, amorphous InGaZnO thin-film transistors exhibit a hump in their transfer characteristics due to state transformation of oxygen vacancies. The channel region of the TFT is significantly self-heated by high currents, leading to a transformation of oxygen vacancies and a remarkable increase in carrier concentration. The model is well validated by annealing experiments, showing a significant increase in carrier concentration when the annealing temperature exceeds 300 degrees Celsius.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Yuhang Guan, Yuqing Zhang, Jinxiong Li, Jiye Li, Yuhan Zhang, Zhenhui Wang, Yuancan Ding, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: In recent years, high-k gate dielectrics have received increasing attention in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) due to the need for stronger gate controllability. This study developed an ultra-thin top-gate insulator of atomic-layer-deposited (ALD) HfOx for amorphous indium-gallium-zinc oxide (a-IGZO) TFTs. However, the reliability of the 4-nm HfOx-gated a-IGZO transistor is poor due to interface defects caused by the interface reaction between HfOx and a-IGZO during the ALD process. To improve stability, the a-IGZO channel is pre-treated with strong oxidizing plasma. However, further reducing HfOx thickness increases gate leakage current.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Han-Yin Liu, Che-Lun Chang, Pei-Huang Hsu, Wei-Ting Chen, Teng-Yuan Chang, Ching-Sung Lee, Shun-Cheng Shih, Wei-Chou Hsu
Summary: This study investigates the impact of ambient/carrier gases on the material characteristics of a-InGaZnO thin films and the performance of TFTs. The results show that using different gases can improve film quality and TFT performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Shinyoung Park, Jun Tae Jang, Yeongjin Hwang, Hyunkyu Lee, Woo Sik Choi, Dongyeon Kang, Changwook Kim, Hyungjin Kim, Dae Hwan Kim
Summary: Flexible IGZO synaptic TFTs with different gate dielectric layers were fabricated and analyzed to investigate the effect of the gate insulator on weight window and retention characteristics. The weight modulation can be controlled by gate bias, and its impact on pattern recognition accuracy in a neural network was studied.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Analytical
Zenghui Fan, Ao Shen, Yong Xia, Chengyuan Dong
Summary: The influences of oxygen partial pressure on double-stacked channel layers in amorphous InGaZnO thin film transistors for UV light detection were investigated through experiments and simulations. The sensing abilities of the TFTs, including photogenerated current, sensitivity, responsivity, and detectivity, degraded with the increase in oxygen partial pressure. The variations of electron concentrations with oxygen partial pressure under UV light illuminations might explain these experimental results.
Article
Physics, Applied
Diki Purnawati, Juan Paolo Bermundo, Yukiharu Uraoka
Summary: Developing solution-processed ultra-wide bandgap amorphous oxide semiconductor is a challenging task. In this study, we successfully converted a-Ga2O(x) from an insulator to a semiconductor through hydrogen annealing, which was reflected by the performance of the thin-film transistor. The incorporation of hydrogen acted as a shallow donor and increased the carrier concentration.
APPLIED PHYSICS EXPRESS
(2022)
Article
Physics, Applied
Juan Paolo S. Bermundo, Ployrung Kesorn, Naofumi Yoshida, Aimi Syairah Safaruddin, Yukiharu Uraoka
Summary: We demonstrate a solution processed gate insulator with high dielectric constant for high performance and low voltage operation amorphous InGaZnO thin-film transistors. By combining high-k nanoparticles and a polymer matrix, high mobility and low off current can be achieved, and the process temperature can be reduced. The tunability of the gate insulator and further reduction of leakage current are also shown.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
S. Arulkumar, S. Parthiban, J. Y. Kwon, Y. Uraoka, J. P. S. Bermundo, Arka Mukherjee, Bikas C. Das
Summary: In this study, amorphous silicon indium oxide thin films were deposited using a sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The study confirmed the amorphous nature and surface roughness of the deposited films and investigated the effect of different oxygen partial pressures on film properties. The results showed that the annealed films exhibited good performance and stability.
Article
Engineering, Electrical & Electronic
Aimi Syairah Safaruddin, Juan Paolo S. Bermundo, Michael Paul A. Jallorina, Atsuko Yamamoto, Yukiharu Uraoka
Summary: The reliability of solution-processed amorphous indium zinc oxide (a-IZO) thin-film transistors (TFTs) was evaluated using inorganic-organic fluorinated polysilsesquioxane (PSQ:F) passivation layers. The PSQ:F passivation layers exhibited superior barrier property and improved the stability and electrical performance of the devices.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Yujiro Takeda, Takanori Takahashi, Ryoko Miyanaga, Juan Paolo S. Bermundo, Yukiharu Uraoka
Summary: We studied the degradation of top-gate In-Ga-Zn-O (IGZO) thin film transistors (TFTs) with hump formation, positive threshold voltage (Vth) shift, and reduction in on-current (Ion) after negative gate bias and light irradiation stress. This degradation can be attributed to hole trapping at the IGZO/top gate insulator (TGI) interface causing the hump effect, trapped photo-induced electrons at the IGZO/bottom gate insulator (BGI) interface leading to the positive Vth shift, and trapped photo-induced electrons at the n-region of IGZO/BGI interface causing Ion reduction. The presence of trapped electrons induces electric field, resulting in depletion of the channel region and drop in effective gate and drain voltage. The degradation was effectively suppressed by the dual-gate structure.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Applied
Diki Purnawati, Nurul Fajariah, Harmon Prayogi, Juan Paolo Bermundo, Ari Dwi Nugraheni, Sholihun
Summary: This study investigates the stability and atomic geometries of supercell diamond (216 atomic sites) through density functional theory calculations. Eight configurations of C-vacancies, ranging from mono- to octavacancies, are examined. The atomic geometries of perfect and C-multivacancies diamond are also analyzed. Results indicate that the hexavacancy configuration is the most stable, primarily due to its minimum number of dangling bonds.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Applied
Umu Hanifah, Juan Paolo S. Bermundo, Mutsunori Uenuma, Yukiharu Uraoka
Summary: Developing a low-temperature fabrication strategy for amorphous oxide semiconductors, such as amorphous indium zinc oxide (a-IZO) channel layers, for use in flexible oxide-based thin-film transistors (TFTs) is essential. High-performance and highly stable all-solution processed a-IZO TFTs were achieved by varying the duration of a photo-assisted combination treatment. UV irradiation can activate the IZO electrodes and induce TFT switching.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Physics, Multidisciplinary
Sholihun Sholihun, Diki Purnawati, Juan Paolo Bermundo, Harmon Prayogi, Zohan Syah Fatomi, Sri Hidayati
Summary: This study investigates novel two-dimensional square-structured diatomic group-IV materials using density functional theory calculations. The optimized structures are found to be planar. The results show that the square-structured SnGe and SnSi materials are highly stable with narrower bandgap energies, indicating better electronic properties. These stable square structures are believed to have potential applications in future devices.
Article
Chemistry, Multidisciplinary
Aimi Syairah Safaruddin, Juan Paolo S. Bermundo, Chuanjun Wu, Mutsunori Uenuma, Atsuko Yamamoto, Mutsumi Kimura, Yukiharu Uraoka
Summary: This study investigates the ferroelectric-paraelectric phase transition of barium titanate (BTO) nanoparticles with different dimensions. The results show that the 20 nm BTO sample maintains a stable cubic crystal structure, while the 100 nm BTO sample exhibits a transition from a tetragonal to a cubic crystal form at higher temperatures. The analysis also reveals that the tetragonality of the 100 nm BTO decreases at higher temperatures, leading to a narrower hysteresis window. Furthermore, the 100 nm BTO shows a wider hysteresis window compared to the 20 nm BTO, even at a lower loading ratio. These findings provide insights into the size-dependent crystal structure of BTO nanoparticles and their potential applications in thin-film transistor devices.
Article
Engineering, Electrical & Electronic
Dianne C. Corsino, Juan Paolo S. Bermundo, Muhammad Arif Razali, Mutsunori Uenuma, Yukiharu Uraoka
Summary: Thin-film electronics integration onto large-scale flexible substrates is advancing rapidly in various sectors, including display technology and health care. This study demonstrates a full solution approach for oxide thin-film transistor (TFT) fabrication using a spin-coating technique. The researchers utilized a continuous-wave green laser to modify the electrical properties of the semiconductor material and achieve desired TFT performance. The results show that solution-processed TFTs can rival the performance of vacuum-processed TFTs.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Eva Bestelink, Pongsakorn Sihapitak, Ute Zschieschang, Leslie Askew, John M. Shannon, Juan Paolo Bermundo, Yukiharu Uraoka, Hagen Klauk, Radu A. Sporea
Summary: We have successfully demonstrated the implementation of a complementary circuit using thin-film source-gated transistors (SGTs). The n-channel and p-channel SGTs were fabricated using inorganic and organic semiconductors. The complementary inverter showed excellent small-signal gain and noise margin, and the trip point of the inverters can be optically tuned.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Engineering, Electrical & Electronic
Diki Purnawati, Paul Rossener Regonia, Juan Paolo Bermundo, Kazushi Ikeda, Yukiharu Uraoka
Summary: This work presents a machine learning assisted approach to predict the Fermi level of solution-processed ultra-wide-bandgap amorphous gallium oxide. The results show that the ML models can accurately predict the Fermi level and identify optimized fabrication parameters. This study is a significant step towards rapid and cost-effective optimization methods for developing ultra-wide-bandgap amorphous gallium oxide-based devices.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Candell Grace Paredes Quino, Juan Paolo Bermundo, Mutsunori Uenuma, Yukiharu Uraoka
Summary: Solution combustion synthesis was utilized to produce solution-processed SixSnyO thin-film transistors, which exhibited lower carbon impurities and higher metal oxide bond percentages compared to conventional sol-gel films. The optimal Sn concentration for fabricating SixSnyO devices was also determined.
TWENTY-NINETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES: TFT TECHNOLOGIES AND FPD MATERIALS (AM-FPD 22)
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Aimi Syairah Safanrddin, Juan Paolo S. Bermundo, Mutsunori Uenuma, Atsuko Yamamoto, Mutsumi Kimura, Yukiharu Uraoka
Summary: The study investigates the memory characteristics of tetragonal and cubic barium titanate (BTO)/polysiloxane (PSX) nanocomposites, finding that the dominant mechanism for cubic BTO is charge trapping and detrapping, while for tetragonal BTO it is polarization mechanism via dipole alignment. Additionally, the ferroelectric effect widens the memory window of solution-processed BTO/PSX nanocomposites at low processing temperature.
TWENTY-NINETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES: TFT TECHNOLOGIES AND FPD MATERIALS (AM-FPD 22)
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Umu Hanifah, Juan Paolo S. Bermundo, Mutsunori Uenuma, Yukiharu Uraoka
Summary: This research aims to improve the electrical performance of all-solution processed amorphous Indium Zinc Oxide (a-IZO) thin-film transistor (TFT) by varying the duration of photo-assisted treatment. The experimental results showed that TFTs subjected to 90 minutes of UV-combination treatment achieved the optimum value with the highest mobility.
TWENTY-NINETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES: TFT TECHNOLOGIES AND FPD MATERIALS (AM-FPD 22)
(2022)
