Inverted InP quantum dot light-emitting diodes using low-temperature solution-processed metal–oxide as an electron transport layer

Title
Inverted InP quantum dot light-emitting diodes using low-temperature solution-processed metal–oxide as an electron transport layer
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 54, Issue 2S, Pages 02BC01
Publisher
Japan Society of Applied Physics
Online
2014-12-17
DOI
10.7567/jjap.54.02bc01

Ask authors/readers for more resources

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started