Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.04EN01
Keywords
-
Categories
Ask authors/readers for more resources
We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 degrees C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities. (C) 2014 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available