Tunneling field-effect transistor with Si/SiGe material for high current drivability

Published 2014 View Full Article

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Title
Tunneling field-effect transistor with Si/SiGe material for high current drivability
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 6S, Pages 06JE12
Publisher
Japan Society of Applied Physics
Online
2014-05-28
DOI
10.7567/jjap.53.06je12

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