Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 4, Pages -Publisher
IOP Publishing Ltd
DOI: 10.7567/JJAP.53.04ED10
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Funding
- National Science Council (NSC)
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This paper proposes a novel laterally conductive bridge random access memory (L-CBRAM) module using a fully CMOS logic compatible process. A contact buffer layer between the poly-Si and contact plug enables the lateral Ti-based atomic layer to provide on/off resistance ratio via bipolar operations. The proposed device reached more than 100 pulse cycles with an on/off ratio over 10 and very stable data retention under high temperature operations. These results make this Ti-based L-CBRAM cell a promising solution for advanced embedded multi-time programmable (MTP) memory applications. (C) 2014 The Japan Society of Applied Physics
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